?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com bc846- bc850 rev. b bc846- bc850 npn epitaxial silicon transistor tm august 2006 bc846- bc850 npn epitaxial silicon transistor features ? switching and amplifier applications ? suitable for automatic insertion in thick and thin-film circuits ? low noise: bc849, bc850 ? complement to bc856 ... bc860 absolute maximum ratings* t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. electrical characteristics* t a =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2% symbol parameter value units v cbo collector-base voltage : bc846 : bc847/850 : bc848/849 80 50 30 v v v v ceo collector-emitter voltage : bc846 : bc847/850 : bc848/849 65 45 30 v v v v ebo emitter-base voltage : bc846/847 : bc848/849/850 6 5 v v i c collector current (dc) 100 ma p c collector power dissipation 310 mw t j junction temperature 150 c t stg storage temperature -65 ~ 150 c symbol parameter test condition min. typ. max. units i cbo collector cut-off current v cb =30v, i e =0 15 na h fe dc current gain v ce =5v, i c =2ma 110 800 v ce (sat) collector-emitter saturation voltage i c =10ma, i b =0.5ma i c =100ma, i b =5ma 90 200 250 600 mv mv v be (sat) collector-base saturation voltage i c =10ma, i b =0.5ma i c =100ma, i b =5ma 700 900 mv mv v be (on) base-emitter on voltage v ce =5v, i c =2ma v ce =5v, i c =10ma 580 660 700 720 mv mv f t current gain bandwidth product v ce =5v, i c =10ma, f=100mhz 300 mhz c ob output capacitance v cb =10v, i e =0, f=1mhz 3.5 6 pf c ib input capacitance v eb =0.5v, i c =0, f=1mhz 9 pf nf noise figure : bc846/847/848 : bc849/850 v ce = 5v, i c = 200 a r g =2k ?, f=1khz 2 1.2 10 4 db db : bc849 : bc850 v ce = 5v, i c = 200 a r g =2k ? , f=30~15000hz 1.4 1.4 4 3 db db 1. base 2. emitter 3. collector sot-23 1 2 3
2 www.fairchildsemi.com bc846- bc850 rev. b bc846- bc850 npn epitaxial silicon transistor h fe classification ordering information note1 : affix ?-a,-b,-c? means hfe classification. affix ?-m? means the matte type package. affix ?-tf? means the tape & reel type packing. classification a b c h fe 110 ~ 220 200 ~ 450 420 ~ 800 device (note1) device marking package packing method qty(pcs) pin difinitions bc846amtf 8aa sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc846bmtf 8ab sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc846cmtf 8ac sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc847amtf 8ba sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc847bmtf 8bb sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc847cmtf 8bc sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc848amtf 8ca sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc848bmtf 8cb sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc848cmtf 8cc sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc849amtf 8da sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc849bmtf 8db sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc849cmtf 8dc sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc850amtf 8ea sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc850bmtf 8eb sot-23 tape & reel 3000 1.base 2.emitter 3.collector bc850cmtf 8ec sot-23 tape & reel 3000 1.base 2.emitter 3.collector
3 www.fairchildsemi.com bc846- bc850 rev. b bc846- bc850 npn epitaxial silicon transistor typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. collector output capacitance figure 6. current gain bandwidth product 0 4 8 121620 0 20 40 60 80 100 i b = 50 a i b = 100 a i b = 150 a i b = 200 a i b = 250 a i b = 300 a i b = 350 a i b = 400 a i c [ma], collector current v ce [v], collector-emitter voltage 1 10 100 1000 10 100 1000 10000 v ce = 5v h fe , dc current gain i c [ma], collector current 1 10 100 1000 10 100 1000 10000 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current 0.00.20.40.60.81.01.2 0.1 1 10 100 v ce = 2v i c [ma], collector current v be [v], base-emitter voltage 1 10 100 1000 0.1 1 10 100 f=1mhz c ob [pf], capacitance v cb [v], collector-base voltage 0.1 1 10 100 1 10 100 1000 v ce =5v f t [mhz], current gain-bandwidth product i c [ma], collector current
4 www.fairchildsemi.com bc846- bc850 rev. b bc846- bc850 npn epitaxial silicon transistor mechanical dimensions 0.96~1.14 0.12 0.03~0.1 0 0.38 re f 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.02 3 0.20 mi n 0.40 0.03 sot-23 dimensions in millimeters
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